IAUZ40N06S5N050ATMA1 vs IAUZ40N06S5L050ATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5N050ATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5N050ATMA1 - 60V 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5N050ATMA1 β ActiveInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N06S5N050ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.71 |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, TC) | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance (RDS(on), typ) | 5 mΞ© at VGS=10 V | β |
| Maximum Power Dissipation (PD) | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (super-junction N-channel) |
| Channel Type | N-Channel Enhancement Mode | β |
| Package | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Pin Count | 8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | β |
| Operating Temperature Range | -55C to +175C | β |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q100 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packaging | Tape & Reel | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | β | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | β | 5 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | β | 6.4 mΞ© |
| Gate Threshold Voltage V<sub>GS(th)</sub> | β | 2.2 V at 29 Β΅A |
| Total Gate Charge Q<sub>G</sub> | β | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |