IAUZ40N08S5N100ATMA1 vs IAUC64N08S5L075ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N08S5N100ATMA1 von Infineon und IAUC64N08S5L075ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktivInfineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N08S5N100ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,58 |
| Technology | OptiMOS-5 N-Channel MOSFET | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Gehäuse | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TDSON-8-33 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | — |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| RoHS Compliance | — | Compliant |
| Anzahl der Pins | — | 8 |