IAUZ40N10S5N130ATMA1 vs IAUCN10S7L290TATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N10S5N130ATMA1 von Infineon und IAUCN10S7L290TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktivInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N10S5N130ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUZ40N10S5N130ATMA1 | — |
| Technology | OptiMOS 5 (super-junction trench) | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max at VGS=10V | 13 mΩ | — |
| RDS(on) typical | 10 mΩ | — |
| Maximum Power Dissipation (Tc) | 68 W | — |
| Gehäuse | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Lead-Free / RoHS | ROHS3 Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |