IAUZN08S7L177ATMA1 vs IAUCN04S7L042GATMA1 Vergleich
Detaillierter Direktvergleich von IAUZN08S7L177ATMA1 von Infineon und IAUCN04S7L042GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZN08S7L177ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,86 |
| Technology | OptiMOS 7 N-channel power MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| Gehäuse | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Montageart | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Polarity | N-Channel | — |
| Betriebstemperatur | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | — |
| Qualification | AEC-Q101 automotive | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Betriebstemperaturbereich | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |