IAUZN08S7L177ATMA1 vs IAUCN04S7L042GATMA1 比較
詳細な並列比較: IAUZN08S7L177ATMA1 メーカー: Infineon および IAUCN04S7L042GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ 生産中仕様比較
| パラメータ | IAUZN08S7L177ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $0.86 |
| Technology | OptiMOS 7 N-channel power MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| パッケージ | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| 実装タイプ | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Polarity | N-Channel | — |
| 動作温度 | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | — |
| Qualification | AEC-Q101 automotive | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| Lead-Free | Yes | — |
| RoHS ステータス | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| 動作温度範囲 | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |