IAUZN08S7L177ATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUZN08S7L177ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN08S7L177ATMA1
IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
IAUZN08S7L177ATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN08S7L177ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.86 |
| Technology | OptiMOS 7 N-channel power MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 35 A (Tj) | β |
| Power Dissipation (PD) | 45 W (Tc) | β |
| On-Resistance (RDS(on)) | 17.7 mΞ© max | β |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mmΒ²) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Polarity | N-Channel | β |
| Operating Temperature | -55C to +175C (Tj, automotive grade) | β |
| Configuration | Single | β |
| Qualification | AEC-Q101 automotive | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 40V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |