IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 Vergleich

Detaillierter Direktvergleich von IDD04SG60CXTMA2 von Infineon und IDD06SG60CXTMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IDD04SG60CXTMA2 IDD06SG60CXTMA2
Marke Infineon Infineon
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $1,54
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC G3 thinQ Schottky Diode CoolSiC™ Schottky Diode G3 (thinQ™)
Device Type Silicon Carbide (SiC) Schottky Diode, Single —
Repetitive Peak Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF), TC=135 C 4 A —
Non-Repetitive Forward Surge Current (IFSM), tp=10ms [DATA_NEEDED: IFSM surge rating] —
Forward Voltage (VF) typ. at IF=4A, Tj=25 C 1.5 V —
Total Capacitive Charge (Qc) 4.5 nC [DATA_NEEDED: Qc value]
Total Capacitance (Ctot) at VR=400V [DATA_NEEDED: Ctot at 400 V] —
Reverse Current (IR) at VR=600V, Tj=25 C [DATA_NEEDED: IR max at 600 V] —
Betriebs-Sperrschichttemperaturbereich -55 C to +175 C —
Storage Temperature Range -55 C to +150 C —
Gehäuse PG-TO252-3 (DPAK), 3-pin surface mount with tab —
Montageart Surface Mount —
RoHS-Status Compliant Compliant
Lead-Free Finish Yes (Sn plating) —
MSL (Moisture Sensitivity Level) MSL 3 (per JEDEC J-STD-020) —
Halogenfrei Yes —
Diode Configuration — Single
Technology — Silicon Carbide (SiC) Schottky
Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF) — 6 A
Repetitive Peak Forward Current (IFRM) — [DATA_NEEDED: IFRM]
Non-Repetitive Peak Forward Surge Current (IFSM) — 32 A
Forward Voltage (VF) at IF=6A — 2.1 V (typical)
Reverse Current (IR) Max — 500 nA
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
Gehäuse / Bauform — PG-TO252-3 (DPAK)
Montagestil — Surface Mount (SMD/SMT)
Packaging — Cut Tape (Tape & Reel per factory standard)

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