IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 비교
다음의 상세 나란히 비교: IDD04SG60CXTMA2 제조: Infineon 및 IDD06SG60CXTMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IDD04SG60CXTMA2 | IDD06SG60CXTMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $1.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC G3 thinQ Schottky Diode | CoolSiC™ Schottky Diode G3 (thinQ™) |
| Device Type | Silicon Carbide (SiC) Schottky Diode, Single | — |
| Repetitive Peak Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF), TC=135 C | 4 A | — |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | [DATA_NEEDED: IFSM surge rating] | — |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | 1.5 V | — |
| Total Capacitive Charge (Qc) | 4.5 nC | [DATA_NEEDED: Qc value] |
| Total Capacitance (Ctot) at VR=400V | [DATA_NEEDED: Ctot at 400 V] | — |
| Reverse Current (IR) at VR=600V, Tj=25 C | [DATA_NEEDED: IR max at 600 V] | — |
| 동작 접합 온도 범위 | -55 C to +175 C | — |
| Storage Temperature Range | -55 C to +150 C | — |
| 패키지 | PG-TO252-3 (DPAK), 3-pin surface mount with tab | — |
| 실장 유형 | Surface Mount | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free Finish | Yes (Sn plating) | — |
| MSL (Moisture Sensitivity Level) | MSL 3 (per JEDEC J-STD-020) | — |
| 할로겐 프리 | Yes | — |
| Diode Configuration | — | Single |
| Technology | — | Silicon Carbide (SiC) Schottky |
| Reverse Voltage (VRRM) | — | 600 V |
| Continuous Forward Current (IF) | — | 6 A |
| Repetitive Peak Forward Current (IFRM) | — | [DATA_NEEDED: IFRM] |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 32 A |
| Forward Voltage (VF) at IF=6A | — | 2.1 V (typical) |
| Reverse Current (IR) Max | — | 500 nA |
| 동작 접합 온도 | — | -55 °C to +175 °C |
| 패키지 / 케이스 | — | PG-TO252-3 (DPAK) |
| 장착 스타일 | — | Surface Mount (SMD/SMT) |
| Packaging | — | Cut Tape (Tape & Reel per factory standard) |