IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 对比
详细并排对比 IDD04SG60CXTMA2 出自 Infineon 和 IDD06SG60CXTMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IDD04SG60CXTMA2 | IDD06SG60CXTMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Diodes | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $1.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC G3 thinQ Schottky Diode | CoolSiC™ Schottky Diode G3 (thinQ™) |
| Device Type | Silicon Carbide (SiC) Schottky Diode, Single | — |
| Repetitive Peak Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF), TC=135 C | 4 A | — |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | [DATA_NEEDED: IFSM surge rating] | — |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | 1.5 V | — |
| Total Capacitive Charge (Qc) | 4.5 nC | [DATA_NEEDED: Qc value] |
| Total Capacitance (Ctot) at VR=400V | [DATA_NEEDED: Ctot at 400 V] | — |
| Reverse Current (IR) at VR=600V, Tj=25 C | [DATA_NEEDED: IR max at 600 V] | — |
| 工作结温范围 | -55 C to +175 C | — |
| Storage Temperature Range | -55 C to +150 C | — |
| 封装 | PG-TO252-3 (DPAK), 3-pin surface mount with tab | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free Finish | Yes (Sn plating) | — |
| MSL (Moisture Sensitivity Level) | MSL 3 (per JEDEC J-STD-020) | — |
| 无卤 | Yes | — |
| Diode Configuration | — | Single |
| Technology | — | Silicon Carbide (SiC) Schottky |
| Reverse Voltage (VRRM) | — | 600 V |
| Continuous Forward Current (IF) | — | 6 A |
| Repetitive Peak Forward Current (IFRM) | — | [DATA_NEEDED: IFRM] |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 32 A |
| Forward Voltage (VF) at IF=6A | — | 2.1 V (typical) |
| Reverse Current (IR) Max | — | 500 nA |
| 工作结温 | — | -55 °C to +175 °C |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 安装方式 | — | Surface Mount (SMD/SMT) |
| Packaging | — | Cut Tape (Tape & Reel per factory standard) |