IGD08N120S7ATMA1 vs IPTC017N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IGD08N120S7ATMA1 von Infineon und IPTC017N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IGD08N120S7ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,65 | $3,95 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Betriebs-Sperrschichttemperatur | -40C to +175C (industry grade) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-HDSOP-16 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | OptiMOS 6, N-channel trench MOSFET |
| Configuration | Single | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| Betriebstemperatur | — | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | — | 10 V |