IGD08N120S7ATMA1 vs IPTC017N12NM6ATMA1 Comparación
Comparación detallada lado a lado de IGD08N120S7ATMA1 por Infineon y IPTC017N12NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IGD08N120S7ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $3,95 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Temperatura de unión de funcionamiento | -40C to +175C (industry grade) | — |
| Encapsulado | PG-TO252-3 (DPAK) | PG-HDSOP-16 (Surface Mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | OptiMOS 6, N-channel trench MOSFET |
| Configuration | Single | — |
| Estado RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| Temperatura de funcionamiento | — | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | — | 10 V |