IGD08N120S7ATMA1 vs IPTC017N12NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de IGD08N120S7ATMA1 par Infineon et IPTC017N12NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IGD08N120S7ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $3,95 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Température de jonction en fonctionnement | -40C to +175C (industry grade) | — |
| Boîtier | PG-TO252-3 (DPAK) | PG-HDSOP-16 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | OptiMOS 6, N-channel trench MOSFET |
| Configuration | Single | — |
| Statut RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| Température de fonctionnement | — | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | — | 10 V |