IGL65R080D2XUMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von IGL65R080D2XUMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGL65R080D2XUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,97 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | OptiMOS 7 Power-Transistor |
| Transistortyp | N-Channel GaN HEMT (enhancement-mode) | — |
| Drain-Source Voltage (VDS) | 650 V | 40 V |
| Continuous Drain Current (ID, Tc) | 18 A | — |
| Power Dissipation (PD, Tc) | 81 W | — |
| On-Resistance RDS(on) | 80 mΩ (typical) | — |
| Gehäuse | PG-TSON-8-U06 (ThinPAK 8x8) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount, wettable flank | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ) | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | GaN-on-Si, 200 mm wafer | Trench MOSFET, silicon |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020, where stated) | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |