IGL65R080D2XUMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IGL65R080D2XUMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGL65R080D2XUMA1

IGL65R080D2XUMA1 - 650V 80mΞ© CoolGaN G5 Transistor | Infineon

IGL65R080D2XUMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IGL65R080D2XUMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.97 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN G5 OptiMOS 7 Power-Transistor
Transistor Type N-Channel GaN HEMT (enhancement-mode) β€”
Drain-Source Voltage (VDS) 650 V 40 V
Continuous Drain Current (ID, Tc) 18 A β€”
Power Dissipation (PD, Tc) 81 W β€”
On-Resistance RDS(on) 80 mΞ© (typical) β€”
Package PG-TSON-8-U06 (ThinPAK 8x8) PG-TDSON-8 (source-down)
Mounting Type Surface Mount, wettable flank Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55 Β°C to +175 Β°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Technology GaN-on-Si, 200 mm wafer Trench MOSFET, silicon
Typical Applications SMPS, totem-pole PFC, LLC, USB-PD adapters β€”
RoHS Status Compliant β€”
MSL Level 1 (per JEDEC J-STD-020, where stated) MSL 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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