IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Vergleich
Detaillierter Direktvergleich von IKD15N60RFATMA1 von Infineon und IGB30N60H3ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKD15N60RFATMA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $1,62 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Trench Field Stop |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Betriebs-Sperrschichttemperatur | -40C to +175C | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Gehäuse | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| Verlustleistung (Ptot) | — | 187 W |
| Gate-Emitter Voltage (VGE) | — | +/- 20 V |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Configuration | — | Single IGBT |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| Pin-Anzahl | — | 3 (2 + Tab) |
| RoHS-Status | — | Compliant |
| Switching Behavior | — | MOSFET-like turn-off |