IKD15N60RFATMA1 vs IGB30N60H3ATMA1 비교

다음의 상세 나란히 비교: IKD15N60RFATMA1 제조: Infineon 및 IGB30N60H3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ 활성
Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ 활성

사양 비교

파라미터 IKD15N60RFATMA1 IGB30N60H3ATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.35 $1.62
Technology TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) Trench Field Stop
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC at TC=25C) 30 A —
Continuous Collector Current (IC at TC=100C) 15 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Gate-Emitter Voltage (VGES) +/-20 V —
Gate-Emitter Threshold (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
VCE(sat) at IC=15A, VGE=15V 1.5 V (typical) —
Maximum Power Dissipation (Ptot) 250 W —
동작 접합 온도 -40C to +175C -40C to +175C
Integrated Anti-Parallel Diode Yes (RC-Drives Fast, co-packaged) —
패키지 PG-TO252-3 (DPAK), 3 pins (2 + tab) PG-TO263-3-2 (D2PAK)
실장 유형 Surface Mount Surface Mount
Switching Speed Class Hard-switching, RC-Drives Fast —
Target Application Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) —
RoHS Compliance Compliant —
Manufacturer — Infineon Technologies
Product Family — TRENCHSTOP IGBT3
Collector-Emitter Voltage (VCE) — 600 V
Continuous DC Collector Current (IC, TC=25C) — 60 A
Pulsed Collector Current (ICpuls) — [DATA_NEEDED: pulsed collector current value]
전력 손실 (Ptot) — 187 W
Gate-Emitter Voltage (VGE) — +/- 20 V
컬렉터-이미터 포화 전압 (Vce(sat)) — 1.95 V (typ, at IC=30 A, VGE=15 V)
Gate-Emitter Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
Turn-Off Time (toff) — 262 ns (nominal)
Configuration — Single IGBT
Storage Temperature — -55C to +150C
Terminal Form — Gull Wing
핀 수 — 3 (2 + Tab)
RoHS 상태 — Compliant
Switching Behavior — MOSFET-like turn-off

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청