IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Comparaison
Comparaison détaillée côte à côte de IKD15N60RFATMA1 par Infineon et IGB30N60H3ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IKD15N60RFATMA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,35 | $1,62 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Trench Field Stop |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Température de jonction en fonctionnement | -40C to +175C | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Boîtier | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO263-3-2 (D2PAK) |
| Type de montage | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| Dissipation de puissance (Ptot) | — | 187 W |
| Gate-Emitter Voltage (VGE) | — | +/- 20 V |
| Tension de saturation collecteur-émetteur (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Configuration | — | Single IGBT |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| Nombre de broches | — | 3 (2 + Tab) |
| Statut RoHS | — | Compliant |
| Switching Behavior | — | MOSFET-like turn-off |