IKD15N60RFATMA1 vs IKD15N60RATMA1 Vergleich
Detaillierter Direktvergleich von IKD15N60RFATMA1 von Infineon und IKD15N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKD15N60RFATMA1 | IKD15N60RATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $1,22 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | — |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Betriebs-Sperrschichttemperatur | -40C to +175C | -40 C to +175 C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Gehäuse | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO252-3 (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Transistortyp | — | IGBT - Trench Field Stop with integrated diode |
| Continuous Collector Current (IC, TC=100C) | — | 30 A |
| Pulsed Collector Current (ICM, tp=1ms) | — | [DATA_NEEDED: pulsed ICM value] |
| Total Power Dissipation (Ptot, TC=25C) | — | 250 W |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | — | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | — | 16 ns / 183 ns (typical) |
| Integrated Diode | — | Yes (anti-parallel, co-packaged) |
| RoHS-Status | — | Compliant |
| Gate Drive Voltage (recommended) | — | 15 V |