IKD15N60RFATMA1 vs IKD15N60RATMA1 Comparação
Comparação detalhada lado a lado de IKD15N60RFATMA1 por Infineon e IKD15N60RATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IKD15N60RFATMA1 | IKD15N60RATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | IGBTs | IGBTs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,35 | $1,22 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | — |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Temperatura de junção de operação | -40C to +175C | -40 C to +175 C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Encapsulamento | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO252-3 (DPAK), surface mount |
| Tipo de montagem | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Tipo de transistor | — | IGBT - Trench Field Stop with integrated diode |
| Continuous Collector Current (IC, TC=100C) | — | 30 A |
| Pulsed Collector Current (ICM, tp=1ms) | — | [DATA_NEEDED: pulsed ICM value] |
| Total Power Dissipation (Ptot, TC=25C) | — | 250 W |
| Tensão de saturação coletor-emissor (Vce(sat)) | — | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | — | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | — | 16 ns / 183 ns (typical) |
| Integrated Diode | — | Yes (anti-parallel, co-packaged) |
| Status RoHS | — | Compliant |
| Gate Drive Voltage (recommended) | — | 15 V |