IKD15N60RFATMA1 vs IKD15N60RATMA1 Comparison
Detailed side-by-side comparison of IKD15N60RFATMA1 by Infineon and IKD15N60RATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD15N60RFATMA1 | IKD15N60RATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $1.22 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | β |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC at TC=25C) | 30 A | β |
| Continuous Collector Current (IC at TC=100C) | 15 A | β |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | β |
| Gate-Emitter Voltage (VGES) | +/-20 V | β |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | β |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | β |
| Maximum Power Dissipation (Ptot) | 250 W | β |
| Operating Junction Temperature | -40C to +175C | -40 C to +175 C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | β |
| Package | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | β |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | β |
| RoHS Compliance | Compliant | β |
| Transistor Type | β | IGBT - Trench Field Stop with integrated diode |
| Continuous Collector Current (IC, TC=100C) | β | 30 A |
| Pulsed Collector Current (ICM, tp=1ms) | β | [DATA_NEEDED: pulsed ICM value] |
| Total Power Dissipation (Ptot, TC=25C) | β | 250 W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | β | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | β | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | β | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | β | 16 ns / 183 ns (typical) |
| Integrated Diode | β | Yes (anti-parallel, co-packaged) |
| RoHS Status | β | Compliant |
| Gate Drive Voltage (recommended) | β | 15 V |