IMLT65R040M2HXTMA1 vs IMLT40R011M2HXTMA1 Vergleich
Detaillierter Direktvergleich von IMLT65R040M2HXTMA1 von Infineon und IMLT40R011M2HXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IMLT65R040M2HXTMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,25 | $12,80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolSiC MOSFET 400V G2 |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Gen-2 |
| Drain-Source Voltage (VDS) | 650 V | 400 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | — |
| Gehäuse | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Transistortyp | — | N-Channel SiC MOSFET |
| Continuous Drain Current (ID, Tc) | — | 144 A |
| Power Dissipation (PD, Tc) | — | 429 W |
| On-State Resistance (RDS(on)) | — | 11 mΩ (typ) |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (benchmark) |
| Recommended Gate Drive Voltage | — | 0 V to 18 V |
| Body Diode | — | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | — | 100% avalanche tested |
| Interconnection Technology | — | XT (best-in-class thermal performance) |
| Operating Mode | — | Enhancement mode |
| Target Topologies | — | 2- and 3-level hard- and soft-switching |
| Target Applications | — | AI server PSU, SMPS, motor drives |
| RoHS-Status | — | Compliant |