IMLT65R040M2HXTMA1 vs IMLT40R011M2HXTMA1 Comparação
Comparação detalhada lado a lado de IMLT65R040M2HXTMA1 por Infineon e IMLT40R011M2HXTMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AtivoComparação de especificações
| Parâmetro | IMLT65R040M2HXTMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,25 | $12,80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolSiC MOSFET 400V G2 |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Gen-2 |
| Drain-Source Voltage (VDS) | 650 V | 400 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Temperatura de junção de operação | -55 °C to +150 °C | — |
| Encapsulamento | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Tipo de transistor | — | N-Channel SiC MOSFET |
| Continuous Drain Current (ID, Tc) | — | 144 A |
| Power Dissipation (PD, Tc) | — | 429 W |
| On-State Resistance (RDS(on)) | — | 11 mΩ (typ) |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (benchmark) |
| Recommended Gate Drive Voltage | — | 0 V to 18 V |
| Body Diode | — | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | — | 100% avalanche tested |
| Interconnection Technology | — | XT (best-in-class thermal performance) |
| Operating Mode | — | Enhancement mode |
| Target Topologies | — | 2- and 3-level hard- and soft-switching |
| Target Applications | — | AI server PSU, SMPS, motor drives |
| Status RoHS | — | Compliant |