IMLT65R040M2HXTMA1 vs IMLT40R011M2HXTMA1 비교

다음의 상세 나란히 비교: IMLT65R040M2HXTMA1 제조: Infineon 및 IMLT40R011M2HXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IMLT65R040M2HXTMA1 IMLT40R011M2HXTMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.25 $12.80
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G2 (2nd generation SiC trench) CoolSiC MOSFET 400V G2
Technology Silicon Carbide (SiC) N-channel MOSFET Silicon Carbide (SiC) Gen-2
Drain-Source Voltage (VDS) 650 V 400 V
Continuous Drain Current (ID, TC) 57 A —
Pulsed Drain Current (ID,pulse) 143 A —
On-State Resistance RDS(on) (typ, VGS=18V) 40 mΩ —
On-State Resistance RDS(on) (max, VGS=18V) 49 mΩ —
Total Gate Charge QG 28 nC —
Output Charge QOSS @ 400 V 53 nC —
Output Energy EOSS @ 400 V 7.2 µJ —
Continuous Drain Power Dissipation (PD, TC) 268 W —
Recommended Gate Drive Voltage VGS 18 V (turn-off: 0 V or negative) —
동작 접합 온도 -55 °C to +150 °C —
패키지 PG-HDSOP-16-6 (surface mount, top-side-cooled) PG-HDSOP-16-8 (surface mount, top-side cooled)
실장 유형 Surface Mount Surface Mount
Qualification JEDEC industrial —
Packaging Tape & Reel —
Special Features Kelvin source pin, low reverse-recovery charge, hard-switching optimized —
트랜지스터 유형 — N-Channel SiC MOSFET
Continuous Drain Current (ID, Tc) — 144 A
Power Dissipation (PD, Tc) — 429 W
On-State Resistance (RDS(on)) — 11 mΩ (typ)
Gate Threshold Voltage (VGS(th)) — 4.5 V (benchmark)
Recommended Gate Drive Voltage — 0 V to 18 V
Body Diode — Commutation-robust fast body diode, low Qrr
Avalanche Rating — 100% avalanche tested
Interconnection Technology — XT (best-in-class thermal performance)
Operating Mode — Enhancement mode
Target Topologies — 2- and 3-level hard- and soft-switching
Target Applications — AI server PSU, SMPS, motor drives
RoHS 상태 — Compliant

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