IPB017N10N5LFATMA1 vs IPB020N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IPB017N10N5LFATMA1 von Infineon und IPB020N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB017N10N5LFATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,05 | $2,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Linear FET | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 180 A | — |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | — |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55 °C to +175 °C |
| Gehäuse / Bauform | PG-TO263-7 (D2PAK-7), surface mount | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited) | 1 |
| Avalanche Rated | Yes | — |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | — |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Gehäuse | — | PG-TO263-3 (D2PAK) |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Marking Code | — | 020N10LF |