IPB020N08N5ATMA1 vs IPB021N10NM5LF2ATMA1 Vergleich
Detaillierter Direktvergleich von IPB020N08N5ATMA1 von Infineon und IPB021N10NM5LF2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB020N08N5ATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $2,75 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc=25C | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| Gehäuse | PG-TO263-3 (D2PAK-2) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Betriebstemperaturbereich | — | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |