IPB020N08N5ATMA1 vs IPB021N10NM5LF2ATMA1 Comparação
Comparação detalhada lado a lado de IPB020N08N5ATMA1 por Infineon e IPB021N10NM5LF2ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPB020N08N5ATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,45 | $2,75 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc=25C | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| Temperatura de junção de operação | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| Encapsulamento | PG-TO263-3 (D2PAK-2) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Faixa de temperatura de operação | — | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |