IPB020N08N5ATMA1 vs IPB021N10NM5LF2ATMA1 비교

다음의 상세 나란히 비교: IPB020N08N5ATMA1 제조: Infineon 및 IPB021N10NM5LF2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ 활성
Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 활성

사양 비교

파라미터 IPB020N08N5ATMA1 IPB021N10NM5LF2ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.45 $2.75
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) 480 A —
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (PD) at Tc=25C 300 W —
동작 접합 온도 -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
패키지 PG-TO263-3 (D2PAK-2) PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
실장 유형 Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) —
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL level] [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 Linear FET 2
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25°C — 176 A
Continuous Drain Current (I_D) at T_A=25°C — 30 A
R_DS(on) Maximum — 2.1 mΩ
Gate-Source Voltage (V_GS) Maximum — ±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25°C — 375 W
Power Dissipation (P_D) at T_A=25°C — 3.8 W
동작 온도 범위 — -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range]
Drive Voltage (Max R_DS(on), Min R_DS(on)) — 10 V, 15 V

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