IPB020NE7N3GATMA1 vs BSC042NE7NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IPB020NE7N3GATMA1 von Infineon und BSC042NE7NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $1,24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A | 100 A |
| Power Dissipation (PD) at Tc | 300 W | 125 W |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Gehäuse | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |