IPB020NE7N3GATMA1 vs IPB025N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPB020NE7N3GATMA1 von Infineon und IPB025N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB020NE7N3GATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $3,74 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB020NE7N3GATMA1 | — |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A | 180 A |
| Power Dissipation (PD) at Tc | 300 W | 300 W |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Gehäuse | PG-TO263-3 (D²PAK, TO-263AB) | PG-TO263-7 (D2PAK-7) 6+Tab |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +175C (junction) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| FET Type | — | N-Channel |
| RDS(on) Typical at VGS=10V, ID=100A | — | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V |
| Input Capacitance (Ciss) | — | 2.58 nF |
| Gate Charge (Qg) Typical | — | [DATA_NEEDED: Qg value] |
| Halogenfrei | — | Yes |