IPB027N10N3GATMA1 vs IPB120N10S405ATMA1 Vergleich
Detaillierter Direktvergleich von IPB027N10N3GATMA1 von Infineon und IPB120N10S405ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB027N10N3GATMA1 | IPB120N10S405ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $2,10 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | Enhancement Mode (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55 C to +175 C |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | [DATA_NEEDED: Qg] |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Peak Reflow Temperature | — | 260 C |
| Avalanche Tested | — | 100% (production-screened) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |