IPB027N10N3GATMA1 vs IPB120N10S405ATMA1 对比
详细并排对比 IPB027N10N3GATMA1 出自 Infineon 和 IPB120N10S405ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB027N10N3GATMA1 | IPB120N10S405ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $2.10 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | Enhancement Mode (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55 C to +175 C |
| 封装 | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) Surface Mount |
| 安装类型 | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | [DATA_NEEDED: Qg] |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Power Dissipation (PD) at Tc | — | 190 W |
| On-Resistance R_DS(on) (typ) | — | 5 mΩ at VGS=10 V |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Peak Reflow Temperature | — | 260 C |
| Avalanche Tested | — | 100% (production-screened) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| Gate Threshold Voltage (typ) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr - body diode] |