IPB027N10N3GATMA1 vs IPB120N10S405ATMA1 비교

다음의 상세 나란히 비교: IPB027N10N3GATMA1 제조: Infineon 및 IPB120N10S405ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 ✓ 활성
Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 ✓ 활성

사양 비교

파라미터 IPB027N10N3GATMA1 IPB120N10S405ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.62 $2.10
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) Enhancement Mode (Trench)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
동작 온도 범위 -55°C to +175°C (TJ) -55 C to +175 C
패키지 PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK) Surface Mount
실장 유형 Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
RoHS 상태 Compliant —
MSL 레벨 [DATA_NEEDED: moisture sensitivity level] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] [DATA_NEEDED: Qg]
트랜지스터 유형 — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 120 A
Power Dissipation (PD) at Tc — 190 W
On-Resistance R_DS(on) (typ) — 5 mΩ at VGS=10 V
MSL (Moisture Sensitivity Level) — MSL1 (unlimited floor life at ≤30 C / 85% RH)
Peak Reflow Temperature — 260 C
Avalanche Tested — 100% (production-screened)
Automotive Qualification — AEC-Q101 Qualified
RoHS Compliance — Green Product (RoHS compliant)
Gate Threshold Voltage (typ) — [DATA_NEEDED: VGS(th)]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr - body diode]

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