IPB038N12N3GATMA1 vs BSC039N06NSATMA1 Vergleich
Detaillierter Direktvergleich von IPB038N12N3GATMA1 von Infineon und BSC039N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB038N12N3GATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Gehäuse / Bauform | PG-TO263-3 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 (TrenchFET-style) |
| Gate Drive | Logic-level compatible | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Gehäuse | — | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Anzahl der Pins | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |