IPB038N12N3GATMA1 vs BSC039N06NSATMA1 对比
详细并排对比 IPB038N12N3GATMA1 出自 Infineon 和 BSC039N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB038N12N3GATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.78 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| 封装 / 外壳 | PG-TO263-3 (D2PAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 (TrenchFET-style) |
| Gate Drive | Logic-level compatible | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| 工作结温 | — | -55C to +150C |
| 封装 | — | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| 引脚数 | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |