IPB100N04S4H2ATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IPB100N04S4H2ATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB100N04S4H2ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $0,89 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Gehäuse | PG-TO263-3-2 (D2PAK-2) Surface Mount | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| MSL-Level | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL level] |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| RoHS-Status | — | Compliant |
| Betriebstemperaturbereich | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |