IPB100N04S4H2ATMA1 vs IAUCN04S7N037GATMA1 비교

다음의 상세 나란히 비교: IPB100N04S4H2ATMA1 제조: Infineon 및 IAUCN04S7N037GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ 활성

사양 비교

파라미터 IPB100N04S4H2ATMA1 IAUCN04S7N037GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.42 $0.89
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/range]
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
동작 접합 온도 -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
패키지 PG-TO263-3-2 (D2PAK-2) Surface Mount SSO4G 5x6 mm² (PG-THSOG-4-1)
실장 유형 Surface Mount Surface Mount (IMS substrate attach compatible)
MSL 레벨 MSL1 (up to 260C peak reflow) [DATA_NEEDED: MSL level]
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
RoHS 상태 — Compliant
동작 온도 범위 — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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