IPB100N04S4H2ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.89 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-T2 (trench gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| MSL Level | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL level] |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| RoHS Status | β | Compliant |
| Operating Temperature Range | β | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |