IPB120N10S405ATMA1 vs IPB90N06S4L04ATMA2 Vergleich

Detaillierter Direktvergleich von IPB120N10S405ATMA1 von Infineon und IPB90N06S4L04ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 ✓ Aktiv
Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IPB120N10S405ATMA1 IPB90N06S4L04ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,10 $0,94
Transistortyp N-Channel MOSFET —
Technology Enhancement Mode (Trench) OptiMOS T2, N-channel enhancement mode
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 120 A —
Power Dissipation (PD) at Tc 190 W —
On-Resistance R_DS(on) (typ) 5 mΩ at VGS=10 V —
Gehäuse PG-TO263-3 (D2PAK) Surface Mount PG-TO263-3-2 (D2PAK)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +175 C -55 °C to +175 °C
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≤30 C / 85% RH) —
Peak Reflow Temperature 260 C 260 °C
Avalanche Tested 100% (production-screened) 100% avalanche-tested
Automotive Qualification AEC-Q101 Qualified —
RoHS Compliance Green Product (RoHS compliant) —
Gate Threshold Voltage (typ) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr - body diode] —
Manufacturer — Infineon Technologies
Part Number — IPB90N06S4L04ATMA2
Drain-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D, Tc) — 90 A
Pulsed Drain Current (I_D,pulse) — 360 A
Power Dissipation (P_D, Tc) — 150 W
On-State Resistance R_DS(on) (typ @ VGS=10V) — 3.4 mΩ
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th)]
Gate-Source Voltage (V_GS) — ±20 V
MSL-Level — MSL1 (unlimited floor life)
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS / Halogen-Free — Yes (Green Product)

Datenblätter & Ressourcen

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