IPB120P04P4L03ATMA2 vs IPD50P04P4L11ATMA2 Vergleich

Detaillierter Direktvergleich von IPB120P04P4L03ATMA2 von Infineon und IPD50P04P4L11ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IPB120P04P4L03ATMA2 IPD50P04P4L11ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $0,82
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Betriebs-Sperrschichttemperatur -55C to +175C -55 °C to +175 °C
Gehäuse PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK), surface mount
Montageart Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Pin-Anzahl 3 (Gate, Drain, Source) 3 (Drain / Tab / Source / Gate)
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant (per Infineon product page) —
Transistortyp — P-Channel MOSFET, enhancement mode
Drain-Source Voltage VDS — -40 V
Continuous Drain Current ID (TC = 25 °C) — -50 A
On-State Resistance RDS(on) (VGS = -10 V) — 10.6 mΩ typical
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) — -1.0 V to -2.5 V typical
Typical Gate Charge Qg — 45 nC
Power Dissipation PD (TC = 25 °C) — 58 W
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern