IPB180P04P4L02ATMA2 vs IPB120P04P4L03ATMA2 Vergleich
Detaillierter Direktvergleich von IPB180P04P4L02ATMA2 von Infineon und IPB120P04P4L03ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ AktivInfineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPB180P04P4L02ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $1,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-P2 | — |
| Transistortyp | P-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | — |
| Gehäuse | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 7 (6 + tab) | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant (per Infineon product page) | Compliant (per Infineon product page) |
| Tab Connection | Drain | — |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |