IPB180P04P4L02ATMA2 vs IPB120P04P4L03ATMA2 Comparación
Comparación detallada lado a lado de IPB180P04P4L02ATMA2 por Infineon y IPB120P04P4L03ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ ActivoInfineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IPB180P04P4L02ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $1,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-P2 | — |
| Tipo de transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | — |
| Encapsulado | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 7 (6 + tab) | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant (per Infineon product page) | Compliant (per Infineon product page) |
| Tab Connection | Drain | — |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |