IPB200N25N3GATMA1 vs IPB072N15N3GATMA1 Vergleich

Detaillierter Direktvergleich von IPB200N25N3GATMA1 von Infineon und IPB072N15N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB200N25N3GATMA1 IPB072N15N3GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,65 $2,84
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 —
Transistortyp N-Channel MOSFET —
Gehäuse PG-TO263-3 (D2PAK) PG-TO263-3-2 (D2PAK-2, 3 pins + tab)
Montageart Surface Mount Surface Mount
Drain-Source Voltage (V_DS) 250 V 150 V
Continuous Drain Current (I_D) at T_C 64 A —
Power Dissipation (P_D) at T_C 300 W —
R_DS(on) max at V_GS=10V 20 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/max] [DATA_NEEDED: V_GS(th) typical]
Technology OptiMOS 3 (Trench) OptiMOS 3 (trench MOSFET)
Gate Charge (Q_g) [DATA_NEEDED: Q_g typical] —
Betriebstemperaturbereich -55C to +175C -55 C to +175 C
RoHS-Status Compliant Compliant
Halogenfrei Yes (per Infineon OptiMOS family datasheet) —
MSL-Level 1 (per JEDEC J-STD-020) —
Pin-Anzahl 3 (2+tab) —
FET Type — N-Channel
Continuous Drain Current (I_D, Tc=25C) — 100 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed I_DM]
Maximum Power Dissipation (P_D, Tc=25C) — 300 W
R_DS(on) typical at VGS=10V — 7.2 mOhm
R_DS(on) max at VGS=10V — [DATA_NEEDED: max R_DS(on) at VGS=10V]
Gate-Source Voltage (V_GS) max — +/-20 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at VGS=10V]
Avalanche Energy Rated — Yes (single-pulse E_AS)
Intrinsic Body Diode — Yes (low Q_rr, sync-rectifier capable)
Manufacturer Ordering Code Suffix — GATMA1 (tape and reel, 1000 pcs)

Datenblätter & Ressourcen

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