IPB200N25N3GATMA1 vs IPB072N15N3GATMA1 Comparaison
Comparaison détaillée côte à côte de IPB200N25N3GATMA1 par Infineon et IPB072N15N3GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPB200N25N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $2,84 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Type de transistor | N-Channel MOSFET | — |
| Boîtier | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Type de montage | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | 150 V |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | [DATA_NEEDED: V_GS(th) typical] |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 (trench MOSFET) |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Plage de température de fonctionnement | -55C to +175C | -55 C to +175 C |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes (per Infineon OptiMOS family datasheet) | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Nombre de broches | 3 (2+tab) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc=25C) | — | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 300 W |
| R_DS(on) typical at VGS=10V | — | 7.2 mOhm |
| R_DS(on) max at VGS=10V | — | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | — | +/-20 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Avalanche Energy Rated | — | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | — | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | — | GATMA1 (tape and reel, 1000 pcs) |