IPB200N25N3GATMA1 vs IPB072N15N3GATMA1 Comparación
Comparación detallada lado a lado de IPB200N25N3GATMA1 por Infineon y IPB072N15N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPB200N25N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $2,84 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | 150 V |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | [DATA_NEEDED: V_GS(th) typical] |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 (trench MOSFET) |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 C to +175 C |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes (per Infineon OptiMOS family datasheet) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Recuento de pines | 3 (2+tab) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc=25C) | — | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 300 W |
| R_DS(on) typical at VGS=10V | — | 7.2 mOhm |
| R_DS(on) max at VGS=10V | — | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | — | +/-20 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Avalanche Energy Rated | — | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | — | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | — | GATMA1 (tape and reel, 1000 pcs) |