IPB35N10S3L26ATMA2 vs ISC037N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IPB35N10S3L26ATMA2 von Infineon und ISC037N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB35N10S3L26ATMA2 | ISC037N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $3,62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Power-Transistor | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | 120 V |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| Gepulster Drain-Strom | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | PG-TDSON-8 FL (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C | -55C to +175C (junction) |
| Anzahl der Pins | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Technology | — | OptiMOS 6 (N-channel trench MOSFET) |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |