IPB35N10S3L26ATMA2 vs ISC037N12NM6ATMA1 Comparación
Comparación detallada lado a lado de IPB35N10S3L26ATMA2 por Infineon y ISC037N12NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPB35N10S3L26ATMA2 | ISC037N12NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $3,62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Power-Transistor | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | 120 V |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| Corriente de drenador pulsada | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | PG-TDSON-8 FL (SuperSO8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C (junction) |
| Número de pines | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Technology | — | OptiMOS 6 (N-channel trench MOSFET) |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |