IPB35N10S3L26ATMA2 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA2 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA2 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 100 V | 120 V |
| Continuous Drain Current (Id) at Tc | 35 A | β |
| Pulsed Drain Current | 180 A | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| RDS(on) (typical) | 26.3 mOhm | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction) |
| Number of Pins | 3 | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | β |
| Technology | β | OptiMOS 6 (N-channel trench MOSFET) |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |