IPB45N06S4L08ATMA3 vs IPB110P06LMATMA1 Vergleich
Detaillierter Direktvergleich von IPB45N06S4L08ATMA3 von Infineon und IPB110P06LMATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB45N06S4L08ATMA3 - 60V 45A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB45N06S4L08ATMA3 ✓ AktivSpezifikationsvergleich
| Parameter | IPB45N06S4L08ATMA3 | IPB110P06LMATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $1,31 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID, TC=25C) | 45 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.9 mOhm | — |
| Power Dissipation (TC=25C) | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gate Threshold Voltage VGS(th) | 1.2 V to 2.4 V (typ 1.7 V) | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (260C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes | Yes |
| Halogenfrei | Yes | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: reverse recovery charge] | — |
| Thermal Resistance RthJC max | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| FET Type | — | P-Channel |
| Technology | — | OptiMOS (trench MOSFET) |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Gehäuse / Bauform | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| RoHS-Status | — | Compliant |