IPB45N06S4L08ATMA3 vs IPB110P06LMATMA1 Comparación
Comparación detallada lado a lado de IPB45N06S4L08ATMA3 por Infineon y IPB110P06LMATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB45N06S4L08ATMA3 - 60V 45A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB45N06S4L08ATMA3 ✓ ActivoComparación de especificaciones
| Parámetro | IPB45N06S4L08ATMA3 | IPB110P06LMATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $1,31 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID, TC=25C) | 45 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.9 mOhm | — |
| Power Dissipation (TC=25C) | 71 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Gate Threshold Voltage VGS(th) | 1.2 V to 2.4 V (typ 1.7 V) | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (260C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes | Yes |
| Sin halógenos | Yes | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: reverse recovery charge] | — |
| Thermal Resistance RthJC max | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| FET Type | — | P-Channel |
| Technology | — | OptiMOS (trench MOSFET) |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (TJ) |
| Encapsulado / Carcasa | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Estado RoHS | — | Compliant |