IPB60R040CFD7ATMA1 vs IPL60R085P7AUMA1 Vergleich
Detaillierter Direktvergleich von IPB60R040CFD7ATMA1 von Infineon und IPL60R085P7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB60R040CFD7ATMA1 | IPL60R085P7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,19 | $2,65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS P7 superjunction (7th generation) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | 39 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Verlustleistung (TC=25°C) | 227 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | PG-VSON-4 (VSON-4, source-down) |
| Montageart | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Continuous Drain Current (ID, Tc=100°C) | — | 24 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 85 mΩ at VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Maximum Power Dissipation (Ptot) | — | 154 W |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +150 °C |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| ESD Robustness (HBM) | — | >2 kV (all pins) |
| Qualification | — | JEDEC industrial |
| Polarity | — | N-channel |